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| SHINDENGEN Schottky Rectifiers (SBD) Dual D10SD6M 60V 10A FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe Fully Isolated Molding APPLICATION OUTLINE DIMENSIONS Case : ITO-220 Unit : mm *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions RatingsUnit Storage Temperature Tstg -40*150*Z Operating Junction Temperature Tj 150 *Z V Maximum Reverse Voltage RM 60 V Repetitive Peak Surge Reverse Voltage 0.5ms, duty 1/40 V RRSM width Pulse 65 V Average Rectified Forward Current wave, R-load, Rating for each diodeA IO 50Hz sine 10 Io/2, Tc= IFSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle 100 value, Tj=1 peak A Repetitive Peak Surge Reverse Power 10Es, Rating of per diode, Tj= 25*Z P RRSM width Pulse 330 W Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 kV Mounting Torque TOR(Recommended torque* 0.3Nm) F 0.5 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions RatingsUnit Forward Voltage V I=5A, FF Pulse measurement, Rating of per diode Max.0.58V I V=V M, per diode Reverse Current R R R Pulse measurement, Rating of Max.4.5mA Junction Capacitance Cj f=1MHz, V Rating of per diode =10V, R Typ.200pF Thermal Resistance AEjcjunction to case Max.3.3 *Z/W AEcfcase to heatsink, Mounting torque=0.5Nm Max.1.5 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D10SD6M Forward Voltage 10 Forward Current IF [A] 1 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D10SD6M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] D10SD6M 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Tc=125C [TYP] Reverse Current IR [mA] 10 Tc=100C [TYP] Tc=75C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] D10SD6M 30 Reverse Power Dissipation DC D=0.05 0.1 0.2 Reverse Power Dissipation PR [W] 25 20 0.3 15 0.5 10 SIN 5 0.8 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D10SD6M 10 Forward Power Dissipation DC D=0.8 Forward Power Dissipation PF [W] 8 0.3 0.5 SIN 0.2 6 0.05 4 0.1 2 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D10SD6M 20 Derating Curve Average Rectified Forward Current IO [A] DC 15 D=0.8 0.5 10 SIN 0.3 0.2 5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 30V 0 0 IO VR tp D=tp /T T D10SD6M 20 Derating Curve Average Rectified Forward Current IO [A] DC 15 D=0.8 0.5 10 SIN 0.3 0.2 5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Heatsink Temperature Tf [C] VR = 30V 0 0 IO VR tp D=tp /T T D10SD6M 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=125C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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